PBSS9110Y,115 datasheet

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• Маркировка
  PBSS9110Y,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS9110Y,115 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Frequency - Transition: 100MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 625mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 at 1 mA at 5 V, 150 at 250 mA at 5 V, 150 at 500 mA at 5 V, 125 at 1 A at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 150 at 1 mA at 5 V Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PBSS9110Y T/R Other Names: 934057983115, PBSS9110Y T/R
• Количество страниц
  13 шт.
• Формат
  PDF

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• Размер файла
  149,17 KB

PBSS9110Y,115 datasheet скачать

PBSS9110Y,115 datasheet